1/7 ? bta/btb12 and t12 series snubberless ?, logic level & standard 12a triac s april 2002 - ed: 5a main features: description available either in through-hole or surface-mount packages, the bta/btb12 and t12 triac series is suitable for general purpose ac switching. they can be used as an on/off function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... the snubberless versions (bta/btb...w and t12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. by using an internal ceramic pad, the bta series provides voltage insulated tab (rated at 2500v rms) complying with ul standards (file ref.: e81734) symbol value unit i t(rms) 12 a v drm /v rrm 600 and 800 v i gt (q 1 ) 10 to 50 ma absolute maximum ratings symbol parameter value unit i t(rms) rms on-state current (full sine wave) d 2 pak/to-220ab tc = 105c 12 a to-220ab ins. tc = 90c i tsm non repetitive surge peak on-state current (full cycle, tj initial = 25c) f = 50 hz t = 20 ms 120 a f = 60 hz t = 16.7 ms 126 i 2 ti 2 t value for fusing tp = 10 ms 78 a 2 s di/dt critical rate of rise of on-state current i g = 2 x i gt , tr 100 ns f = 120 hz tj = 125c 50 a/s v dsm /v rsm non repetitive surge peak off-state voltage tp = 10 ms tj = 25c v drm /v rrm + 100 v i gm peak gate current tp = 20 s tj = 125c 4 a p g(av) average gate power dissipation tj = 125c 1 w t stg t j storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c g a2 a1 g a2 a2 a1 a2 a2 a1 g d 2 pak (t12-g) g a2 a1 to-220ab insulated (bta12) to-220ab (btb12)
bta/btb12 and t12 series 2/7 electrical characteristics (tj = 25c, unless otherwise specified) n snubberless? and logic level (3 quadrants) n standard (4 quadrants) static characteristics note 1: minimum igt is guaranted at 5% of igt max. note 2: for both polarities of a2 referenced to a1 symbol test conditions quadrant t12 bta/btb12 unit t1235 sw cw bw i gt (1) v d = 12 v r l = 30 w i - ii - iii max. 35 10 35 50 ma v gt i - ii - iii max. 1.3 v v gd v d = v drm r l = 3.3 k w tj = 125c i - ii - iii min. 0.2 v i h (2) i t = 100 ma max.35153550ma i l i g = 1.2 i gt i - iii max. 50 25 50 70 ma ii 60 30 60 80 dv/dt (2) v d = 67 %v drm gate open tj = 125c min. 500 40 500 1000 v/s (di/dt)c (2) (dv/dt)c = 0.1 v/s tj = 125c min. - 6.5 - - a/ms (dv/dt)c = 10 v/s tj = 125c - 2.9 - - without snubber tj = 125c 6.5 - 6.5 12 symbol test conditions quadrant bta/btb12 unit cb i gt (1) v d = 12 v r l = 30 w i - ii - iii iv max. 25 50 50 100 ma v gt all max. 1.3 v v gd v d = v drm r l = 3.3 k w tj = 125c all min. 0.2 v i h (2) i t = 500 ma max. 25 50 ma i l i g = 1.2 i gt i - iii - iv max. 40 50 ma ii 80 100 dv/dt (2) v d = 67 %v drm gate open tj = 125c min. 200 400 v/s (dv/dt)c (2) (di/dt)c = 5.3 a/ms tj = 125c min. 5 10 v/s symbol test conditions value unit v t (2) i tm = 17 a tp = 380 s tj = 25c max. 1.55 v v to (2) threshold voltage tj = 125c max. 0.85 v r d (2) dynamic resistance tj = 125c max. 35 m w i drm i rrm v drm = v rrm tj = 25c max. 5a tj = 125c 1 ma
bta/btb12 and t12 series 3/7 thermal resistances s = copper surface under tab product selector btb: non insulated to-220ab package ordering information symbol parameter value unit r th(j-c) junction to case (ac) d 2 pak/to-220ab 1.4 c/w to-220ab insulated 2.3 r th(j-a) junction to ambient s = 1 cm 2 d 2 pa k 45 c/w to-220ab to-220ab insulated 60 part number voltage (xxx) sensitivity type package 600 v 800 v bta/btb12-xxxb x x 50 ma standard to-220ab bta/btb12-xxxbw x x 50 ma snubberless to-220ab bta/btb12-xxxc x x 25 ma standard to-220ab bta/btb12-xxxcw x x 35 ma snubberless to-220ab bta/btb12-xxxsw x x 10 ma logic level to-220ab t1235-xxxg x x 35 ma snubberless d 2 pa k bt a 12 - 600 bw (rg) triac series insulation: a: insulated b: non insulated current: 12a sensitivity & type b: 50ma standard bw: 50ma snubberless c: 25ma standard cw: 35ma snubberless sw: 10ma logic level voltage: 600: 600v 800: 800v packing mode blank: bulk rg: tube t 12 35 - 600 g (-tr) triac series sensitivity: 35: 35ma voltage: 600: 600v 800: 800v current: 12a package: g: d pak 2 packing mode: blank: tube -tr: tape & reel
bta/btb12 and t12 series 4/7 other information note: xxx = voltage, yy = sensitivity, z = type part number marking weight base quantity packing mode bta/btb12-xxxyz bta/btb12-xxxyz 2.3 g 250 bulk bta/btb12-xxxyzrg bta/btb12-xxxyz 2.3 g 50 tube t1235-xxxg t1235xxxg 1.5 g 50 tube t1235-xxxg-tr t1235xxxg 1.5 g 1000 tape & reel fig. 1: maximum power dissipation versus rms on-state current (full cycle). fig. 2-1: rms on-state current versus case temperature (full cycle). fig. 2-2: rms on-state current versus ambient temperature (printed circuit board fr4, copper thickness: 35m),full cycle. fig. 3: relative variation of thermal impedance versus pulse duration. 0123456789101112 0 2 4 6 8 1 0 1 2 1 4 1 6 p (w) it(rms)(a) 0 25 50 75 100 125 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 it(rms) (a) bta btb/t12 tc(c) 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 tamb(c) it(rms) (a) dpak (s=1cm ) 2 2 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 1e-2 1e-1 1e+0 k=[zth/rth] zth(j-c) zth(j-a) tp(s)
bta/btb12 and t12 series 5/7 fig. 4: on-state characteristics (maximum values). fig. 5: surge peak on-state current versus number of cycles. fig. 6: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of i2t. fig. 7: relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). fig. 8: relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values). fig. 9: relative variation of critical rate of decrease of main current versus junction temperature. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 itm (a) tj=25c tj max tj max. vto = 0.85 v rd = 35 m w vtm(v) 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 110 120 130 itsm (a) non repetitive tj initial=25c repetitive tc=90c one cycle t=20ms number of cycles 0.01 0.10 1.00 10.00 10 100 1000 tp (ms) itsm (a), i2t (a2s) tj initial=25c itsm i2t di/dt limitation: 50a/s -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 igt,ih,il[tj] / igt,ih,il [tj=25c] igt ih & il tj(c) 0.1 1.0 10.0 100.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 (di/dt)c [(dv/dt)c] / specified (di/dt)c bw/cw/t1235 c b sw (dv/dt)c (v/s) 0 25 50 75 100 125 0 1 2 3 4 5 6 tj (c) (di/dt)c [tj] / (di/dt)c [tj specified]
bta/btb12 and t12 series 6/7 fig. 10: d2pak thermal resistance junction to ambient versus copper surface under tab (printed circuit board fr4, copper thickness: 35 m m). 0 4 8 1216202428323640 0 10 20 30 40 50 60 70 80 s(cm2) rth(j-a) (c/w) d2pak package mechanical data d2pak (plastic) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.30 4.60 0.169 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.25 1.40 0.048 0.055 c 0.45 0.60 0.017 0.024 c2 1.21 1.36 0.047 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.28 0.393 0.405 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 r 0.40 0.016 v2 0 8 0 8 a c2 d r 2.0 min. flat zone a2 v2 c a1 g l l3 l2 b b2 e footprint dimensions (in millimeters) d2pak (plastic) 8.90 3.70 1.30 5.08 16.90 10.30
bta/btb12 and t12 series 7/7 package mechanical data to-220ab / to-220ab ins. ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 m b l4 c b2 a2 l2 c2 l3 b1 a1 a f l i e c1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - isreal - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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